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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/KnN49
Repositorysid.inpe.br/iris@1916/2006/03.07.13.51   (restricted access)
Last Update2006:03.07.13.51.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2006/03.07.13.51.34
Metadata Last Update2018:06.05.01.20.24 (UTC) administrator
Secondary KeyINPE-13581-PRE/8791
ISSN0257-8972
Citation KeyUedaBeloReutPara:2001:FoSiSi
TitlePlasma immersion ion implantation of nitrogen in Si: formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects
Year2001
MonthFeb
Access Date2024, May 19
Secondary TypePRE PI
Number of Files1
Size181 KiB
2. Context
Author1 Ueda, Mario
2 Beloto, Antonio Fernando
3 Reuther, H.
4 Parascandola, S.
Resume Identifier1 8JMKD3MGP5W/3C9JHSB
2 8JMKD3MGP5W/3C9JGJ8
Group1 LAP-INPE-MCT-BR
2 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasmas, (INPE, LAP)
JournalSurface and Coatings Technology
Volume136
Number1-3
Pages244-248
History (UTC)2006-03-07 13:51:34 :: vinicius -> administrator ::
2008-06-10 22:25:27 :: administrator -> vinicius ::
2011-05-28 13:31:58 :: vinicius -> administrator ::
2018-06-05 01:20:24 :: administrator -> marciana :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsplasma immersion ion implantation
silicon nitride
surface modification
Auger electron spectroscopy
AbstractPlasma immersion ion implantation (PIII) of nitrogen in silicon (Si) wafers was carried out using a de glow discharge plasma source and a hard tube pulser. Ion irradiation times ranging from 3 to 60 min were used to accumulate different doses. Surface analysis of these samples was carried out by Auger electron spectroscopy (AES), revealing a high atomic concentration of nitrogen (up to 60%) in the as-implanted Si wafer, besides the presence of different impurities as oxygen and carbon in significant quantities. Depth profiles of these elements were obtained as well as of compound species as SiO2 and Si3N4, using this high-energy resolution AES. Comparing the concentration profiles of implanted nitrogen in Si and the corresponding retained doses in these samples, it was possible to understand the thermal and sputtering effects in our present PIII experiment. High-resolution XRD results corroborate the formation of highly stressed layers in the as-implanted substrates. These experimental results are compared to simulations obtained by TRIDYN code. (C) 2001 Elsevier Science B.V. All rights reserved.
AreaFISPLASMA
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Plasma immersion ion...
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4. Conditions of access and use
Languageen
Target File51.pdf
User Groupadministrator
vinicius
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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